20-V power MOSFET in chipscale package

Vishay released a 20-V p-channel TrenchFET power MOSFET in a MICRO FOOT chipscale package. The Si8441DB offers an 0.59-mm profile and a footprint area of 1.5mm by 1mm. It is also the first device of its kind of offer an on-resistance rating at 1.2V. Typical applications will include load switching and battery protection in portable devices such as cell phones, PDAs, digital cameras, MP3 players, and smart phones. The Si8441DB offers an on-resistance range from 0.600Ω at 1.2-V VGS to 0.080 at 4.5-V VGS, with a maximum gate-source voltage of ±5V. The on-resistance rating at 1.2V reduces the need for level shift circuitry, thus saving space in portable electronics designs. Also released, in the same MICRO FOOT package, was the 20-V p-channel Si8451DB. Rated for a maximum gate-to-source voltage of 8V, on-resistance for the Si8451DB ranges from 0.200Ω at 1.5V to 0.080 Ω at 4.5V.