Micron Technology and Intel say a 256Gbit multilevel cell (MLC) version of their 3D NAND technology is now sampling, with a 384Gbit triple level cell (TLC) design to follow shortly. Initial production runs have started and both devices should be in full production by the end of 2015.
Micron Technology and Intel say a 256Gbit multilevel cell (MLC) version of their 3D NAND technology is now sampling, with a 384Gbit triple level cell (TLC) design to follow shortly. Initial production runs have started and both devices should be in full production by the end of 2015.
The 3D NAND technology, jointly developed by Intel and Micron, is said to create storage devices with three times the capacity of competing NAND technologies.
"Micron and Intel's collaboration has created an industry leading solid state storage technology that offers high density, performance and efficiency and is unmatched by any flash today," claimed Brian Shirley, Micron's vice president of memory technology and solutions.
The approach stacks 32 layers of flash cells to achieve 256Gbit MLC and 384Gb TLC parts that fit within a standard package. It also uses a floating gate cell. Because the cells are stacked, each cell can be larger, increasing performance and endurance.
Using these devices, say the partners, standard 2.5in solid state drives with capacities of more than 10Tbyte can be created.
"Intel's development efforts with Micron reflect our continued commitment to offer leading and innovative non volatile memory technologies to the marketplace," said Rob Crooke, general manager of Intel's non volatile memory solutions group. "The significant improvements in density and cost enabled by our 3D NAND technology innovation will accelerate solid state storage in computing platforms."
Author
Graham Pitcher
Source: www.newelectronics.co.uk