IDT and EPC have announced that they are collaborating to develop technology based on gallium nitride (GaN). Under the agreement, the partners will explore how EPC's eGaN technology can be integrated with IDT's products.
"GaN offers exciting opportunities to develop higher performance, differentiated products for our customers," said Sailesh Chittipeddi, IDT's chief technology officer. "I look forward to exploring how GaN-based products, with all their inherent benefits, may be brought to market in the not-so-distant future."
The two companies are looking to address three market sectors. In communications and computing applications, GaN's low capacitance and zero QRR, coupled with the low inductance of a chip scale package, is said to result in high efficiency at high frequency and IDT plans to use this increase in efficiency to improve power density. Meanwhile, the partners are looking to GaN to improve the adoption of wireless power, as well as to create a portfolio of RF products for the communications infrastructure market.
"A growing number of companies, such as IDT, are integrating GaN technology into their solutions as a way to move beyond the limitations of silicon," said Alex Lidow, ceo of EPC. "Our team looks forward to working alongside IDT engineers to bring the speed and efficiency of EPC's GaN technology to IDT customers."
Author
Tom Austin-Morgan
Source: www.newelectronics.co.uk