Researchers at Aalto University have fabricated an electricity conducting material combination with what they call ‘especially promising properties’ by merging graphene and gallium selenide to create a heterojunction.
While many 2D structures that combine with graphene have been fabricated manually, the structure developed by Riikonen and his colleagues uses elements from lateral and vertical device design, which is said to enable the use of standard semiconductor fabrication methods.
“Our inspiration came from existing silicon technology and we want to bring out the state-of-the-art fabrication of 2D material devices from research labs to industry,” claimed researchers Wonjae Kim. “In addition to new and simpler way of manufacturing, our components have excellent characteristics: for example, the on/off ratio – a critical parameter in electronics – is more than 10³. This underscores the feasibility of both GaSe and the device concept.”
He added: “2D components open completely new possibilities for the development of electronics. They would be suitable for wearable electronics and could be placed on spectacles and windows. Moreover, the components are suitable for various sensors.”
Author
Graham Pitcher
Source: www.newelectronics.co.uk