Archive : 12 September 2024 год

Infineon has introduced new power MOSFETs in its StrongIRfet 2 series, positioned as less robust than the company's industrial-grade Optimos devices.

“These new MOSFETs are tailored for mass-market applications such as switched-mode power supplies, motor drives, battery management systems, and uninterruptible power supplies,” according to Infineon.

The company claims these MOSFETs offer improvements in resistance and gate charge over previous models in the series, though specific figures have not been disclosed.

For example, the IPP033N03LF2S model (78A at 10V gate voltage, 25°C) has a maximum Rds(on) of 3.3mΩ with a typical gate charge of 33nC at 10Vg. At a lower gate voltage of 4.5V, these values change to a maximum Rds(on) of 5mΩ and a typical gate charge of 16nC. The current rating drops to 60A at 100°C, with a junction-to-case thermal resistance of 1.8°C/W.

Infineon has announced that by the end of 2024, this family will be available in a wider range of packages, including DPAK, D2PAK, PQFN, and SuperSO8.

Here are the maximum current and maximum Rds(on) values at 4.5Vg for each part in the series:

- IPP011N03LF2S: 210A, 1.5mΩ
- IPP050N03LF2S: 53A, 7.5mΩ
- IPP033N03LF2S: 78A, 5mΩ
- IPP018N03LF2S: 128A, 2.5mΩ
- IPP020N03LF2S: 125A, 3mΩ
- IPP023N03LF2S: 121A, 3.5mΩ
- IPP044N03LF2S: 53A, 6mΩ

All devices have a typical gate threshold voltage of 1.35V (2.35V max) and operate over a temperature range of -55 to +175°C.