Archive : 18 January 2008 год

Toshiba Electronics Europe (TEE) has added two devices to its UMOS V-H Series high-speed switching MOSFETs. The TPCA8012-H and TPCA8019-H n-channel MOSFETs extend the UMOS V- H Series with higher drain current of 40 Amps (A) and 45A (max.) and lower RDSON of 4.9 milliohms (mΩ) and 3.1mΩ , respectively (max. value at VGS = 10V). The UMOS V-H Series MOSFETs are targeted for use in synchronous DC-DC converters in power supplies. The devices join nine other members of the UMOS V-H Series. The TPCA8012-H and TPCA8019-H are offered in SOP Advance packages with a footprint of 5.0mm x 6.0mm. The TPCA8012-H features maximum drain current of 40A, a drain-source voltage maximum rating of 30V and a RDSON of 4.9mΩ (max. value at VGS = 10V). TPCA8019-H is also designed to operate with a 30V drain-source voltage maximum rating, with a maximum drain current of 45A and an RDSON of 3.1mΩ (max. value at VGS = 10V). The SOP Advance package from Toshiba features a 41 percent lower profile than a standard SOP-8 package, and enables approximately 47 percent higher power dissipation. UMOS V is a fifth generation process technology in the Toshiba fast switching series.