Electronics News
Archive : 16 October 2007 год
Thanks to their standard interfaces – 8 bit CPU for the LS022Q8UX05 and CMOS for the LQ025Q3DW02 – both TFT LCDs can be integrated into many different applications and are simple to control. The QVGA resolution and a contrast ratio of 400:1 with a brightness of up to 350 cd/m² give brilliant picture reproduction. And the user also get complete all-round vision because the 2.2-inch and the 2.5-inch panels are equipped with Sharp’s proprietary ASV technology, which provides a 160° viewing angle in all directions for these TFT displays. The 2.2-inch TFT LCD is also a transflective display. In other words, around four percent of the structures within the display are coated with reflective microstructures that generate a contrast of 10:1 in reflective mode. This means that the display guarantees high visibility at all ambient light conditions, even in direct sunlight.
Thanks to Sharp’s Continuous Grain Silicon technology, the necessary drivers and power ICs for controlling the LS022Q8UX05 are directly integrated into the display glass. The 2.2-inch display also stands out thanks to its compact dimensions, robustness and low power consumption. In normal operation, the power consumption is 14 mW, which can be reduced to 3 mW if the display is only partially used.
Availability
Samples of the LS022Q8UX05 and the LQ025Q3DW02 will be available from Q4 2007 through Sharp sales offices and distribution partners in Europe.
Toshiba Corporation has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz. The main application of the transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba plans to start sample shipment of the power FET by the end of 2007 and to go into mass production by the end of March 2008. Advances in Ku-band microwave amplifiers focus on replacing the electron tubes conventionally used at this bandwidth with semiconductors, particularly GaN devices, which offer advantageous high power characteristics at higher microwave frequencies.
The power FET has a high electron mobility transistor (HEMT) structure that Toshiba has optimized for the Ku-band. The company replaced source wire bonding with via hole technology to reduce parasitic inductance, and also improved overall design of the matching circuit for practical application at Ku-band frequencies.
Omron Electronic Components Business Europe has announced a new addition to its range of air and gas flow sensors designed for medical, analytical and HVAC/VAV (Variable Air Volume) equipment. The MEMS-based D6F-P air flow sensor delivers uni- or bi-directional sensing with amplified output. The D6F-P is a solution for flow rate monitoring and dumper control in HVAC/VAV applications. It also acts as a replacement for differential pressure sensors in HVAC systems as well as medical equipment such as respirators, ventilators, Continuous Positive Airway Pressure (CPAP) and sleep apnea monitors. The flow sensor measures 7 x 35 x 17.2 mm (L x W x H) offering increased flexibility of the system design.
To offer more freedom in locating the sensor, the D6F-P comes with lead terminals for PCB mounting or as a connector option. In a bypass configuration, the D6F-P can measure flow higher than its own capability and can also maintain differential pressure sensing with high sensitivity and repeatability even in very low flow conditions. It comes with a uni- or bi-directional flow range of 1.0 LPM at an output voltage of 0.5 to 2.5V with an accuracy of +/-5% full-scale deflection. A key feature is its integrated, patent pending dust segregation system (DSS) which separates up to 99.5% (simulation test result) of dry air borne particulates from contaminated air helping to maintain performance characteristics of the sensor over its lifetime. In the D6F-P the DSS is bi-directional, protecting against particulates whatever the direction of flow.