Looking to help designers achieve greater efficiency and reduced system size,Toshiba has introduced the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology.Looking to help designers achieve greater efficiency and reduced system size,Toshiba has introduced the first 800V power MOSFET based on its high voltage DTMOS IV super junction technology.
Sampling now, the TK17A80W utilises the company's single epitaxial process and is suited to equipment that requires high reliability, power efficiency and a compact design. Typical applications include power supplies and adapters, fly back converters and LED lighting equipment.
Compared to multi epitaxial processes, Toshiba's Deep Trench technology is optimised to deliver lower ON-resistance (RDS(ON)) at higher temperatures. It also offers reduced turn-off switching losses (EOSS) than previous generations.
DTMOS IV enables faster switching performance by reducing parasitic capacitance between gate and drain. Typical CISS for the TK17A80W is 1450pF (at VDS=300V, f=100kHz). Maximum ratings are 800VDSS , ±30VGSS and 17A drain current. Maximum RDS(ON) is 0.3Ohm.
Toshiba is due to start mass production of the TK17A80W in the fourth quarter of 2014.
Author
Laura Hopperton
Source: www.newelectronics.co.uk