Renesas Technology Europe announced the availability in Europe of the RJK0383DPA, a dual-type power MOSFET for synchronous rectification DC/DC converters. The device achieves higher power supply efficiency and can be used for memory or ASICs in products such as laptop PCs and communication devices. Sample shipments will begin in October 2008. RJK0383DPA incorporates dual power MOSFETs of two different types, composing a synchronous rectification DC/DC converter in a WPAK high-thermal-radiation package measuring 5.1 × 6.1 mm and 0.8 mm thick (max.). The device integrates dual power MOSFETs of two different types, one as the high-side elementand the other as the low-side element. The high-side power MOSFET has a drain-gate load (Qgd) of 1.5 nC (at VDD=10V) to provide high switching speed and correspondingly high efficiency.
The low-side power MOSFET has an on-resistance (RDS (on)) of 3.7 mOhm (typ.: at 4.5 V) to reduce power loss. In addition, a Schottky barrier diode (SBD) is integrated on the same chip as the low-side power MOSFET to minimize the wiring inductance between them. This speeds up the switch of current flow to the Schottky barrier diode during the DC/DC converter's dead time, further reducing loss. It also has the effect of suppressing voltage spikes during switching, thereby reducing noise. The RJK0383DPA will be followed by two additional products having different output current ratings, the RJK0384DPA and RJK0389DPA. In future more products suitable for other DC/DC converter power supply specifications will be added to the series in response to the needs of the market.