New Vertical NAND (V-NAND) memory solutions and technology have been announced by Samsung which it claims will address the requirements of next generation data processing and storage systems.New Vertical NAND (V-NAND) memory solutions and technology have been announced by Samsung which it claims will address the requirements of next generation data processing and storage systems.
According to the company, these solutions will be at the forefront of enabling today’s most data-intensive tasks such as high-performance computing, machine learning, real-time analytics and parallel computing.
“Our highly advanced V-NAND technologies will offer smarter solutions for greater value by providing high data processing speeds, increased system scalability and ultra-low latency for today’s most demanding cloud-based applications,” said Gyoyoung Jin, executive vice president of memory business at Samsung Electronics.
Samsung is sampling the first 16Tbyte next generation small form factor (NGSFF) SSD, which could improve the memory storage capacity and input/output operations per second of today’s 1U rack servers.
Measuring 30.5 x 110 x 4.38mm, the NGSFF SSD is said to increase the storage capacity of a 1U server system by four times compared to using M.2 drives.
The company has also unveiled its first Z-SSD product: the SZ985. The SZ985 is said to require only 15µs of read latency time which the company claims is a seventh of the read latency of an NVMe SSD, as well as reduce system response time by up to 12 times compared to using NVMe SSDs.
Samsung has further introduced a Key Value technology which allows SSDs to process data without converting it into blocks. Instead, Key Value assigns a ‘key’ or specific location to each 'value' or piece of object data – regardless of its size. The key enables direct addressing of a data location, which in turn enables the storage to be scaled-up and scaled-out in performance and capacity. This is said to lead to faster data inputs and outputs and to extend the life of the SSD.
The arrival of a 1Tbit V-NAND chip due next year will enable 2Tbyte of memory in a single V-NAND package by stacking 16 1Tbit dies.
Author
Peggy Lee
Source: www.newelectronics.co.uk