Researchers at New York State’s Binghamton University have demonstrated an eco-friendly process that enables unprecedented spatial control over the electrical properties of graphene oxide.Researchers at New York State’s Binghamton University have demonstrated an eco-friendly process that enables unprecedented spatial control over the electrical properties of graphene oxide.
By using the probe of an atomic force microscope to trigger a local chemical reaction, Jeffrey Mativetsky, assistant professor of physics at Binghamton University, and PhD student Austin Faucett showed that electrically conductive features as small as 4nm can be patterned into individual graphene oxide sheets.
Mativetsky said: "Unlike standard methods for manipulating the properties of graphene oxide, our process can be implemented under ambient conditions and is environmentally-benign, making it a promising step towards the practical integration of graphene oxide into future technologies."
The study provides new insight into the spatial resolution limits and mechanisms for a relatively new process for patterning conductive regions in insulating graphene oxide. The minimum conductive feature size of 4nm is the smallest achieved so far by any method for this material.
This research not only enables fundamental study of the nanoscale physical properties of graphene oxide but also opens up new avenues for incorporating graphene oxide into future technologies. Because the process developed by Mativetsky avoids the use of harmful chemicals, high temperatures or inert gas atmospheres, his work represents a promising step towards environmentally-friendly manufacturing with graphene oxide.
"At first, this will mainly be useful for studying fundamental properties and lab-scale devices," said Mativetsky. "Eventually, this work may help lead to the practical integration of graphene oxide into low-cost and flexible electronics, solar cells, and sensors.”
Pic: Jeffrey Mativetsky, assistant professor of physics at Binghamton University
Author
Tom Austin-Morgan
Source: www.newelectronics.co.uk