STMicroelectronics (ST) has extended its MDmesh M2 series of N-channel power MOSFETs by introducing devices that are claimed to offer the industry's highest power efficiencies in power supplies for servers, laptops, telecom, and consumer applications. With these devices, designers can create switching power conversion solutions that are lighter and more compact.
The 600V MDmesh M2 EP devices combine ST's strip layout with an improved vertical structure and an optimised diffusion process to approach the ideal switch, with low ON-resistance and the lowest available turn-off switching losses. They are tailored for very-high-frequency converters (f> 150 kHz), suiting them for demanding Power Supply Unit applications.
The devices are claimed to offer low switching losses, especially under light-load conditions. In addition to the Qg of down to 16nC exhibited by the MDmesh M2 devices, the M2 EP devices are said to feature up to a 20% reduction in Eoff, thus reducing the turn-off switching losses in hard-switching converters. This Eoff reduction in the low current range is said to boost efficiency under light-load conditions.
The enhanced shape of the turn-off waveforms is said to lead to higher efficiency and lower noise in resonant converters, allowing more energy to be stored and re-used, rather than dissipated as heat, cycle by cycle.
Offered in a range of packages the MDmesh M2 EP family targets power-supply applications that require the highest efficiency levels.
Author
Tom Austin-Morgan
Source: www.newelectronics.co.uk