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Search results: BF1
| Name | Description | Manufacture |
|---|---|---|
| BF1009SR | Silicon N-Channel MOSFET Tetrode | Infineon Technologies AG |
| BF1012 | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network | Siemens Semiconductor Group |
| BF1012S | Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) | Siemens Semiconductor Group |
| BF1012W | SILICON N-CHANNEL MOSFET TETRODE (For low-noise/ gain-controlled input stages up to 1 GHz) | Siemens Semiconductor Group |
| BF1100 | Dual-gate MOS-FETs | Philips Semiconductors |
| BF1100R | Dual-gate MOS-FETs | Philips Semiconductors |
| BF1100WR | Dual-gate MOS-FET | Philips Semiconductors |
| BF1101 | N-channel dual-gate MOS-FETs | Philips Semiconductors |
| BF1101R | N-channel dual-gate MOS-FETs | Philips Semiconductors |
| BF1101WR | N-channel dual-gate MOS-FETs | Philips Semiconductors |
| BF1102 | Dual N-channel dual gate MOS-FET | Philips Semiconductors |
| BF1105 | N-channel dual-gate MOS-FETs | Philips Semiconductors |